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1SS417(TL3,T) Технические параметры

Toshiba  1SS417(TL3,T) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Toshiba
Mount Surface Mount
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Number of Terminals 2Terminals
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 40
Peak Reverse Repetitive Voltage (V) 45
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 1
Peak Forward Voltage (V) 0.62
Peak Reverse Current (uA) 5
Maximum Power Dissipation (mW) 100
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 100
AEC Qualified No
Supplier Package SOD-923
Military No
Mounting Surface Mount
Package Length 0.8
Package Width 0.6
PCB changed 2
Lead Shape Flat
RoHS Compliant
Package Description R-PDSO-F2
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Свойство продукта Значение свойства
Operating Temperature-Min -40 °C
Operating Temperature-Max 100 °C
Manufacturer Part Number 1SS417(TL3,T)
Power Dissipation (Max) 0.1 W
Package Shape RECTANGULAR
Manufacturer Toshiba America Electronic Components
Number of Elements 1 Element
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Risk Rank 7.1
Packaging Cut Tape (CT)
Part Status Obsolete
ECCN Code EAR99
Type Small Signal Schottky Diode
HTS Code 8541.10.00.70
Technology SCHOTTKY
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code unknown
Pin Count 2
JESD-30 Code R-PDSO-F2
Configuration Single
Diode Type RECTIFIER DIODE
Output Current-Max 0.1 A
Max Reverse Voltage (DC) 40 V
Average Rectified Current 100 mA
Rep Pk Reverse Voltage-Max 45 V
RoHS Status RoHS Compliant

1SS417(TL3,T) Документы

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