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Toshiba 2SK241-GR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Toshiba | |
| Surface Mount | NO | |
| Material | Si | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| ECCN (US) | EAR99 | |
| Channel Mode | Depletion | |
| Number of Elements per Chip | 1 | |
| Maximum Drain Source Voltage (V) | 20 | |
| Maximum Gate Source Voltage (V) | ±5 | |
| Maximum Continuous Drain Current (A) | 0.03 | |
| Maximum Gate Source Leakage Current (nA) | 50 | |
| Maximum IDSS (uA) | 14000 | |
| Typical Input Capacitance @ Vds (pF) | 3@10V | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 0.035@10V | |
| Typical Forward Transconductance (S) | 0.01 | |
| Maximum Power Dissipation (mW) | 200 | |
| Typical Power Gain (dB) | 28 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 125 | |
| Supplier Package | 2-4E1D | |
| Military | No | |
| Mounting | Through Hole | |
| Package Height | 3.2(Max) | |
| Package Length | 4.2(Max) | |
| Package Width | 2.6(Max) | |
| PCB changed | 3 | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 125 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer Part Number | 2SK241-GR | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Toshiba America Electronic Components | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Risk Rank | 5.69 | |
| Drain Current-Max (ID) | 0.03 A | |
| JESD-609 Code | e0 | |
| Part Status | Obsolete | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 0.03 A | |
| DS Breakdown Voltage-Min | 20 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Feedback Cap-Max (Crss) | 0.05 pF | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| RoHS Status | RoHS non-compliant |