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2SK2855(TE12L,F) Технические параметры
Toshiba 2SK2855(TE12L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Toshiba | |
| Material | Si | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | No | |
| PPAP | No | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Maximum Drain Source Voltage (V) | 10 | |
| Maximum Gate Source Voltage (V) | ±6 | |
| Maximum Continuous Drain Current (A) | 1 | |
| Maximum Power Dissipation (mW) | 500 | |
| Typical Drain Efficiency (%) | 55(Min) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Mounting | Surface Mount | |
| Package Height | 1.6(Max) | |
| Package Width | 2.5 | |
| Package Length | 4.6(Max) | |
| PCB changed | 3 | |
| Tab | Tab | |
| Supplier Package | PW-Mini | |
| Packaging | Tape and Reel | |
| Part Status | Obsolete | |
| Pin Count | 4 | |
| Configuration | Single Dual Source | |
| Channel Type | N |
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