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2SK2865(TE16L1,NQ) Технические параметры
Toshiba 2SK2865(TE16L1,NQ) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Toshiba | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Part Number | 2SK2865(TE16L1,NQ) | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Toshiba America Electronic Components | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Risk Rank | 5.66 | |
| Part Package Code | SC-64 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Drain Current-Max (ID) | 2 A | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 5 Ω | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| DS Breakdown Voltage-Min | 600 V | |
| Avalanche Energy Rating (Eas) | 93 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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