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2SK2998 Технические параметры
Toshiba 2SK2998 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Toshiba | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | 2SK2998 | |
| Package Shape | ROUND | |
| Manufacturer | Toshiba America Electronic Components | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Lifetime Buy | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Risk Rank | 5.39 | |
| Part Package Code | TO-92 | |
| Drain Current-Max (ID) | 0.5 A | |
| Pbfree Code | No |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | BOTTOM | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-92 | |
| Drain Current-Max (Abs) (ID) | 0.5 A | |
| Drain-source On Resistance-Max | 18 Ω | |
| DS Breakdown Voltage-Min | 500 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.9 W |
Индекс :
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