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3SK126-Y(TE85L,F) Технические параметры

Toshiba  3SK126-Y(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка Toshiba
Material Si
ECCN (US) EAR99
Channel Mode Depletion
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 15
Maximum Gate Source Voltage (V) ±9
Maximum Continuous Drain Current (A) 0.03
Typical Input Capacitance @ Vds (pF) 4.25@6V
Maximum Power Dissipation (mW) 150
Typical Power Gain (dB) 25
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Свойство продукта Значение свойства
Supplier Package 2-3J1A
Military No
Mounting Surface Mount
Package Height 1.1
Package Length 2.9
Package Width 1.5
PCB changed 3
Tab Tab
Packaging Tape and Reel
Part Status Obsolete
Pin Count 4
Configuration Single Dual Gate
Channel Type N
RoHS Status RoHS Compliant
Просмотр сходства

3SK126-Y(TE85L,F) Документы

3SK126-Y(TE85L,F) brand manufacturers: Toshiba, Anli stock, 3SK126-Y(TE85L,F) reference price.Toshiba. 3SK126-Y(TE85L,F) parameters, 3SK126-Y(TE85L,F) Datasheet PDF and pin diagram description download.You can use the 3SK126-Y(TE85L,F) Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find 3SK126-Y(TE85L,F) pin diagram and circuit diagram and usage method of function,3SK126-Y(TE85L,F) electronics tutorials.You can download from the Anli.