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CUS10S30,H3F(B Технические параметры
Toshiba CUS10S30,H3F(B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | Toshiba | |
| Material | Si | |
| ECCN (US) | EAR99 | |
| Maximum DC Reverse Voltage (V) | 20 | |
| Peak Reverse Repetitive Voltage (V) | 30 | |
| Maximum Continuous Forward Current (A) | 1 | |
| Peak Non-Repetitive Surge Current (A) | 5 | |
| Peak Forward Voltage (V) | 0.45 | |
| Peak Reverse Current (uA) | 500 | |
| Maximum Diode Capacitance (pF) | 135(Typ) | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 125 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Supplier Package | USC | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 0.9 | |
| Package Length | 1.7 | |
| Package Width | 1.25 | |
| PCB changed | 2 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| Type | Small Signal Schottky Diode | |
| Pin Count | 2 | |
| Configuration | Single | |
| RoHS Status | RoHS Compliant |
CUS10S30,H3F(B Документы
- datasheetstoshiba-cus10s30h3ft-datasheets-4271.pdf
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