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DF3S6.8ECT(TPL3) Технические параметры

Toshiba  DF3S6.8ECT(TPL3) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Circuit Protection Kits - TVS Diodes
Марка Toshiba
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Surface Mount YES
Supplier Device Package CST3
Number of Elements per Chip 2Elements per Chips
Supplier Package CST
Direction Type Uni-Directional
ESD Protection Voltage ±8@Contact Disc kV
Mounting Surface Mount
Lead Free Status / RoHS Status --
Cd - Diode Capacitance 37 pF
Breakdown Voltage / V 5.3 V
Maximum Operating Temperature + 150 C
Vesd - Voltage ESD Contact 8 kV
Unit Weight 0.000026 oz
Factory Pack QuantityFactory Pack Quantity 10000
Manufacturer Toshiba
Brand Toshiba
RoHS Details
Manufacturer Part Number DF3S6.8ECT(TPL3)
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Breakdown Voltage-Nom 5.3 V
Risk Rank 5.8
Operating Temperature -55 to 150 °C
Series --
Свойство продукта Значение свойства
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) --
ECCN Code EAR99
Type Diode Arrays
Applications General Purpose
HTS Code 8541.10.00.50
Capacitance 37 pF
Subcategory TVS Diodes / ESD Suppression Diodes
Reach Compliance Code unknown
Pin Count 3
Termination Style SMD/SMT
Working Voltage 5 V
Polarity Unidirectional
Configuration Dual
Number of Channels 2 ChannelChannel
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Power Line Protection No
Voltage - Breakdown (Min) 5.3V
Power - Peak Pulse --
Current - Peak Pulse (10/1000μs) --
Voltage - Clamping (Max) @ Ipp --
Voltage - Reverse Standoff (Typ) 5V (Max)
Unidirectional Channels 2
Product Type ESD Suppressors
Rep Pk Reverse Voltage-Max 5 V
Capacitance @ Frequency 37pF @ 1MHz
Product Category ESD Suppressors / TVS Diodes
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