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GT40WR21,Q(O Технические параметры
Toshiba GT40WR21,Q(O technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | Toshiba | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | No | |
| PPAP | No | |
| Maximum Gate Emitter Voltage (V) | ±25 | |
| Maximum Collector-Emitter Voltage (V) | 1800 | |
| Typical Collector Emitter Saturation Voltage (V) | 2.9 | |
| Maximum Continuous Collector Current (A) | 40 | |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 | |
| Maximum Power Dissipation (mW) | 375 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 175 | |
| Mounting | Through Hole | |
| Package Height | 19 | |
| Package Width | 4.5 | |
| Package Length | 15.9(Max) | |
| PCB changed | 3 | |
| Tab | Tab | |
| Standard Package Name | TO-3PN | |
| Supplier Package | TO-3PN | |
| Lead Shape | Through Hole | |
| Operating Temperature (Max.) | 175C | |
| Operating Temperature Classification | Military |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Type | TO-3PN | |
| Collector Current (DC) | 40(A) | |
| Rad Hardened | No | |
| Operating Temperature (Min.) | -55C | |
| Gate to Emitter Voltage (Max) | ±25(V) | |
| RoHS | Compliant | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | GT40WR21,Q(O | |
| Manufacturer | Toshiba America Electronic Components | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Risk Rank | 5.67 | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Subcategory | Insulated Gate BIP Transistors | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| Configuration | Single | |
| Polarity/Channel Type | N-CHANNEL | |
| Channel Type | N | |
| Power Dissipation-Max (Abs) | 375 W | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 1800 V | |
| Gate-Emitter Voltage-Max | 25 V | |
| Fall Time-Max (tf) | 350 ns |
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