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GT50J342,Q(O Технические параметры
Toshiba GT50J342,Q(O technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | Toshiba | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | No | |
| PPAP | No | |
| Maximum Gate Emitter Voltage (V) | ±25 | |
| Maximum Collector-Emitter Voltage (V) | 600 | |
| Typical Collector Emitter Saturation Voltage (V) | 1.5 | |
| Maximum Continuous Collector Current (A) | 80 | |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 | |
| Maximum Power Dissipation (mW) | 394 | |
| Minimum Operating Temperature (°C) | -55 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Operating Temperature (°C) | 175 | |
| Mounting | Through Hole | |
| Package Height | 19 | |
| Package Width | 4.5 | |
| Package Length | 15.5 | |
| PCB changed | 3 | |
| Tab | Tab | |
| Supplier Package | TO-3PN | |
| RoHS | Compliant | |
| Part Status | Obsolete | |
| Pin Count | 3 | |
| Configuration | Single | |
| Channel Type | N |
Индекс :
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