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JDV2S14E(TH3,F,T) Технические параметры

Toshiba  JDV2S14E(TH3,F,T) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Toshiba
ECCN (US) EAR99
Maximum Reverse Voltage (V) 10
Maximum Reverse Current (uA) 0.003
Minimum Tuning Ratio 1.99
Tuning Ratio Test Condition 1V/2.5V
Minimum Diode Capacitance (pF) [email protected]
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Package ESC
Свойство продукта Значение свойства
Military No
Mounting Surface Mount
Package Height 0.6
Package Length 1.2
Package Width 0.8
PCB changed 2
Part Status NRND
Type VCO|TCXO
Pin Count 2
Configuration Single
RoHS Status RoHS Compliant
Просмотр сходства

JDV2S14E(TH3,F,T) Документы

JDV2S14E(TH3,F,T) brand manufacturers: Toshiba, Anli stock, JDV2S14E(TH3,F,T) reference price.Toshiba. JDV2S14E(TH3,F,T) parameters, JDV2S14E(TH3,F,T) Datasheet PDF and pin diagram description download.You can use the JDV2S14E(TH3,F,T) Diodes - RF, DSP Datesheet PDF, find JDV2S14E(TH3,F,T) pin diagram and circuit diagram and usage method of function,JDV2S14E(TH3,F,T) electronics tutorials.You can download from the Anli.