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MG100Q2YS11 Технические параметры
Toshiba MG100Q2YS11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Miscellaneous | |
| Марка | Toshiba | |
| Surface Mount | NO | |
| Number of Terminals | 7Terminals | |
| Transistor Element Material | SILICON | |
| Manufacturer Part Number | MG100Q2YS11 | |
| Manufacturer | Toshiba | |
| RoHS | Non-Compliant | |
| Package Description | FLANGE MOUNT, R-PUFM-X7 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 150 °C | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.72 | |
| Subcategory | Insulated Gate BIP Transistors | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PUFM-X7 | |
| Qualification Status | Not Qualified | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 800 W | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| VCEsat-Max | 2.7 V | |
| Fall Time-Max (tf) | 1000 ns |
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