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RN1119MFV,L37F Технические параметры

Toshiba  RN1119MFV,L37F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка Toshiba
Package / Case SOT-723-3
RoHS Details
Transistor Polarity NPN
Typical Input Resistor 1 kOhms
Mounting Styles SMD/SMT
DC Collector/Base Gain hfe Min 120
Collector- Emitter Voltage VCEO Max 50 V
Свойство продукта Значение свойства
Pd - Power Dissipation 150 mW
Maximum Operating Temperature + 150 C
Emitter- Base Voltage VEBO 5 V
Factory Pack QuantityFactory Pack Quantity 8000
Series RN1119MFV
Packaging MouseReel
Configuration Single
Number of Channels 1 ChannelChannel
Continuous Collector Current 100 mA
Просмотр сходства
RN1119MFV,L37F brand manufacturers: Toshiba, Anli stock, RN1119MFV,L37F reference price.Toshiba. RN1119MFV,L37F parameters, RN1119MFV,L37F Datasheet PDF and pin diagram description download.You can use the RN1119MFV,L37F Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find RN1119MFV,L37F pin diagram and circuit diagram and usage method of function,RN1119MFV,L37F electronics tutorials.You can download from the Anli.