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- TLP293(V4-GHTL,E
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TLP293(V4-GHTL,E Технические параметры
Toshiba TLP293(V4-GHTL,E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optoisolators - Transistor, Photovoltaic Output | |
| Марка | Toshiba | |
| Package / Case | SO-4 | |
| RoHS | Details | |
| Mounting Styles | SMD/SMT | |
| Current Transfer Ratio-Min | 50 % | |
| If - Forward Current | 50 mA | |
| Maximum Collector Emitter Voltage | 80 V | |
| Maximum Collector Current | 50 mA | |
| Maximum Collector Emitter Saturation Voltage | 0.3 V | |
| Pd - Power Dissipation | 100 mW | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 125 C | |
| Collector-Emitter Breakdown Voltage | 80 V | |
| Factory Pack QuantityFactory Pack Quantity | 2500 | |
| Unit Weight | 0.001764 oz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Vr - Reverse Voltage | 5 V | |
| Description/Function | IRED and Phototransistor | |
| Series | TLP293 | |
| Packaging | MouseReel | |
| Output Type | Phototransistor | |
| Configuration | 1 Channel | |
| Number of Channels | 1 ChannelChannel | |
| Reference Voltage | - | |
| Rise Time | 2 us | |
| Isolation Voltage | 3750 Vrms | |
| Current Transfer Ratio (Max) | 600 % | |
| Current Transfer Ratio | 50 % | |
| Vf - Forward Voltage | 1.4 V | |
| Height | 2.1 mm | |
| Length | 4.55 mm | |
| Width | 2.6 mm |
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