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3SK260-GR Технические параметры
Toshiba America Electronic Components 3SK260-GR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Drain Current-Max (ID) | 0.03 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | TIN LEAD | |
| Additional Feature | LOW NOISE | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 13.5 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.04 pF | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Power Gain-Min (Gp) | 21 dB |
3SK260-GR Документы
- DatasheetsTOSHS09471-1.pdf
Индекс :
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