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SSM3J56MFV Технические параметры

Toshiba America Electronic Components  SSM3J56MFV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Surface Mount YES
Contact plating gold-plated
Number of pins 4pins
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Drain Current-Max (ID) 0.8 A
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Type of connector pin strips
Connector socket
Kind of connector female
Spatial orientation straight
Contacts pitch 2.54mm
Electrical mounting THT
Connector pinout layout 2x2
Row pitch 2.54mm
Свойство продукта Значение свойства
Gross weight 0.18 g
Operating temperature -40...163°C
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current rating 1.5A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain-source On Resistance-Max 0.39 Ω
DS Breakdown Voltage-Min 20 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.5 W
Rated voltage 60V
Feedback Cap-Max (Crss) 10 pF
Profile beryllium copper
Plating thickness 0.254µm
Flammability rating UL94V-0

SSM3J56MFV Документы

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