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SSM5P16FE Технические параметры
Toshiba America Electronic Components SSM5P16FE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | 2-2P1B, 3 PIN | |
| Drain Current-Max (ID) | 0.1 A | |
| Number of Elements | 2 Elements | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-F5 | |
| Qualification Status | Not Qualified | |
| Configuration | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 12 Ω | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.15 W |
SSM5P16FE Документы
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