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TC5514P Технические параметры
Toshiba America Electronic Components TC5514P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 18Terminals | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | DIP, DIP18,.3 | |
| Access Time-Max | 450 ns | |
| Number of Words | 1024 wordsWord | |
| Number of Words Code | 1000Words Codes | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -30 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | DIP | |
| Package Equivalence Code | DIP18,.3 | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| JESD-609 Code | e0 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| HTS Code | 8542.32.00.41 | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Pitch | 2.54 mm | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDIP-T18 | |
| Qualification Status | Not Qualified | |
| Temperature Grade | OTHER | |
| Operating Mode | ASYNCHRONOUS | |
| Organization | 1KX4 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 4 | |
| Standby Current-Max | 0.00002 A | |
| Memory Density | 4096 bit | |
| Parallel/Serial | PARALLEL | |
| I/O Type | COMMON | |
| Memory IC Type | STANDARD SRAM | |
| Standby Voltage-Min | 2 V |
TC5514P Документы
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