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1SS226,LF Технические параметры
Toshiba Semiconductor and Storage 1SS226,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Power Dissipation (Max) | 0.15W | |
| Packaging | Tape & Reel (TR) | |
| Published | 2017 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| HTS Code | 8541.10.00.70 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| JESD-30 Code | R-PDSO-G3 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 500nA @ 80V | |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA | |
| Forward Current | 100mA | |
| Operating Temperature - Junction | 125°C Max | |
| Output Current-Max | 0.1A | |
| Voltage - DC Reverse (Vr) (Max) | 80V | |
| Reverse Recovery Time | 4 ns | |
| Max Repetitive Reverse Voltage (Vrrm) | 85V | |
| Peak Non-Repetitive Surge Current | 2A | |
| Diode Configuration | 1 Pair Series Connection | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
Индекс :
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