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1SS308(TE85L,F Технические параметры
Toshiba Semiconductor and Storage 1SS308(TE85L,F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74A, SOT-753 | |
| Number of Pins | 5Pins | |
| Packaging | Cut Tape (CT) | |
| Published | 2009 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 200mW | |
| Element Configuration | Common Anode | |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 500nA @ 80V | |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA | |
| Forward Current | 100mA | |
| Max Reverse Leakage Current | 500nA | |
| Operating Temperature - Junction | 125°C Max | |
| Max Surge Current | 2A | |
| Max Reverse Voltage (DC) | 80V | |
| Average Rectified Current | 100mA | |
| Reverse Recovery Time | 4 ns | |
| Peak Reverse Current | 500nA | |
| Max Repetitive Reverse Voltage (Vrrm) | 85V | |
| Peak Non-Repetitive Surge Current | 2A | |
| Diode Configuration | 4 Common Anode | |
| Recovery Time | 1.6 ns | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
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