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1SS315TPH3F Технические параметры

Toshiba Semiconductor and Storage  1SS315TPH3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 11 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Package / Case SC-76, SOD-323
Number of Pins 2Pins
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number 1SS315
Max Current Rating 30mA
Element Configuration Single
Diode Type Schottky - Single
Forward Current 30mA
Max Reverse Leakage Current 25μA
Forward Voltage 250mV
Max Repetitive Reverse Voltage (Vrrm) 5V
Capacitance @ Vr, F 0.6pF @ 0.2V 1MHz
Radiation Hardening No
RoHS Status RoHS Compliant

1SS315TPH3F Документы

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