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Toshiba Semiconductor and Storage 1SS319(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ||
| Factory Lead Time | 11 Weeks | |
| Contact Plating | Copper, Silver, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-61AA | |
| Number of Pins | 4Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Packaging | Cut Tape (CT) | |
| Published | 2007 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 150mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Element Configuration | Dual | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 5μA @ 40V | |
| Voltage - Forward (Vf) (Max) @ If | 600mV @ 100mA | |
| Forward Current | 100mA | |
| Operating Temperature - Junction | 125°C Max | |
| Output Current-Max | 0.1A | |
| Forward Voltage | 600mV | |
| Max Reverse Voltage (DC) | 40V | |
| Average Rectified Current | 100mA | |
| Max Repetitive Reverse Voltage (Vrrm) | 45V | |
| Diode Configuration | 2 Independent | |
| Reverse Current-Max | 5μA | |
| Max Forward Surge Current (Ifsm) | 300mA | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |