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1SS319(TE85L,F) Технические параметры

Toshiba Semiconductor and Storage  1SS319(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Factory Lead Time 11 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-61AA
Number of Pins 4Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Cut Tape (CT)
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Max Power Dissipation 150mW
Свойство продукта Значение свойства
Terminal Form GULL WING
Element Configuration Dual
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Schottky
Current - Reverse Leakage @ Vr 5μA @ 40V
Voltage - Forward (Vf) (Max) @ If 600mV @ 100mA
Forward Current 100mA
Operating Temperature - Junction 125°C Max
Output Current-Max 0.1A
Forward Voltage 600mV
Max Reverse Voltage (DC) 40V
Average Rectified Current 100mA
Max Repetitive Reverse Voltage (Vrrm) 45V
Diode Configuration 2 Independent
Reverse Current-Max 5μA
Max Forward Surge Current (Ifsm) 300mA
Radiation Hardening No
RoHS Status RoHS Compliant
1SS319(TE85L,F) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, 1SS319(TE85L,F) reference price.Toshiba Semiconductor and Storage. 1SS319(TE85L,F) parameters, 1SS319(TE85L,F) Datasheet PDF and pin diagram description download.You can use the 1SS319(TE85L,F) Diodes - Rectifiers - Arrays, DSP Datesheet PDF, find 1SS319(TE85L,F) pin diagram and circuit diagram and usage method of function,1SS319(TE85L,F) electronics tutorials.You can download from the Anli.