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1SS389,L3F Технические параметры
Toshiba Semiconductor and Storage 1SS389,L3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Silver, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-79, SOD-523 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 100°C | |
| Min Operating Temperature | -40°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 20μA @ 10V | |
| Voltage - Forward (Vf) (Max) @ If | 500mV @ 100mA | |
| Forward Current | 100mA | |
| Operating Temperature - Junction | 125°C Max | |
| Max Reverse Voltage (DC) | 10V | |
| Average Rectified Current | 100mA | |
| Max Repetitive Reverse Voltage (Vrrm) | 15V | |
| Capacitance @ Vr, F | 40pF @ 0V 1MHz | |
| Peak Non-Repetitive Surge Current | 1A | |
| RoHS Status | RoHS Compliant |
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