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1SV229TPH3F Технические параметры

Toshiba Semiconductor and Storage  1SV229TPH3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Variable Capacitance (Varicaps, Varactors)
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Surface Mount YES
Diode Element Material SILICON
Number of Elements 1 Element
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Base Part Number 1SV229
JESD-30 Code R-PDSO-G2
Diode Type Single
Capacitance @ Vr, F 6.5pF @ 10V 1MHz
Voltage - Peak Reverse (Max) 15V
Breakdown Voltage-Min 15V
Frequency Band ULTRA HIGH FREQUENCY
Diode Capacitance-Nom 15pF
Capacitance Ratio 2.5
Capacitance Ratio Condition C2/C10
Diode Cap Tolerance 6.67%
Variable Capacitance Diode Classification ABRUPT
RoHS Status RoHS Compliant
Просмотр сходства
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