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2SA1162S-Y, LF(D Технические параметры
Toshiba Semiconductor and Storage 2SA1162S-Y, LF(D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 150mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 125°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Additional Feature | LOW NOISE | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Base Part Number | 2SA1162 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Power - Max | 150mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 6V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Transition Frequency | 80MHz | |
| Frequency - Transition | 80MHz |
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