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2SA1201-Y(TE12L,ZC Технические параметры

Toshiba Semiconductor and Storage  2SA1201-Y(TE12L,ZC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PW-MINI
Mfr Toshiba Semiconductor and Storage
Product Status Active
Current-Collector (Ic) (Max) 800 mA
Transistor Polarity PNP
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 1 W
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 80
Collector-Emitter Saturation Voltage 1 V
Unit Weight 0.001764 oz
Minimum Operating Temperature -
Factory Pack QuantityFactory Pack Quantity 1000
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 120 MHz
Manufacturer Toshiba
Brand Toshiba
Maximum DC Collector Current 800 mA
DC Current Gain hFE Max 240
RoHS Details
Collector- Emitter Voltage VCEO Max 120 V
Package Description ,
Свойство продукта Значение свойства
Manufacturer Part Number 2SA1201-Y(TE12L,ZC
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Risk Rank 5.16
Series -
Operating Temperature 150°C (TJ)
Packaging MouseReel
ECCN Code EAR99
Subcategory Transistors
Technology Si
Reach Compliance Code unknown
Configuration Single
Power Dissipation 1
Power - Max 500 mW
Product Type BJTs - Bipolar Transistors
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 120 V
Transition Frequency 120
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 120 V
Continuous Collector Current 800
Product Category Bipolar Transistors - BJT
Просмотр сходства
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