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Toshiba Semiconductor and Storage 2SA1244-Y(Q) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Contact Plating | Silver, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | PW-MOLD | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Current-Collector (Ic) (Max) | 5A | |
| Number of Elements | 1 Element | |
| hFEMin | 120 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Published | 2013 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 1W | |
| Frequency | 60MHz | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Power Dissipation | 1W | |
| Power - Max | 1W | |
| Gain Bandwidth Product | 60MHz | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 5A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A 1V | |
| Current - Collector Cutoff (Max) | 1μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 3A | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Frequency - Transition | 60MHz | |
| Collector Base Voltage (VCBO) | 60V | |
| Emitter Base Voltage (VEBO) | 5V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |