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2SA1721OTE85LF Технические параметры

Toshiba Semiconductor and Storage  2SA1721OTE85LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Collector-Emitter Saturation Voltage -500mV
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Reach Compliance Code unknown
Element Configuration Single
Power - Max 150mW
Свойство продукта Значение свойства
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Transition Frequency 50MHz
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) -5V
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
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