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2SA1931,BOSCHQ(J Технические параметры

Toshiba Semiconductor and Storage  2SA1931,BOSCHQ(J technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS
Current-Collector (Ic) (Max) 5A
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 60MHz
Просмотр сходства

2SA1931,BOSCHQ(J Документы

2SA1931,BOSCHQ(J brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, 2SA1931,BOSCHQ(J reference price.Toshiba Semiconductor and Storage. 2SA1931,BOSCHQ(J parameters, 2SA1931,BOSCHQ(J Datasheet PDF and pin diagram description download.You can use the 2SA1931,BOSCHQ(J Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SA1931,BOSCHQ(J pin diagram and circuit diagram and usage method of function,2SA1931,BOSCHQ(J electronics tutorials.You can download from the Anli.