Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
2SA1955FVBTPL3Z Технические параметры
Toshiba Semiconductor and Storage 2SA1955FVBTPL3Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Supplier Device Package | VESM | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Collector-Emitter Saturation Voltage | -30mV | |
| Current-Collector (Ic) (Max) | 400mA | |
| hFEMin | 300 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2005 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 100mW | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Power - Max | 100mW | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 250mV | |
| Max Collector Current | 400mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Max Breakdown Voltage | 12V | |
| Frequency - Transition | 130MHz | |
| RoHS Status | RoHS Compliant |
2SA1955FVBTPL3Z Документы
- Datasheets2SA1955F
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ