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2SA949-Y(T6SHRP,FM Технические параметры

Toshiba Semiconductor and Storage  2SA949-Y(T6SHRP,FM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Current-Collector (Ic) (Max) 50mA
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 800mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10A
Voltage - Collector Emitter Breakdown (Max) 150V
Frequency - Transition 120MHz
Просмотр сходства

2SA949-Y(T6SHRP,FM Документы

2SA949-Y(T6SHRP,FM brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, 2SA949-Y(T6SHRP,FM reference price.Toshiba Semiconductor and Storage. 2SA949-Y(T6SHRP,FM parameters, 2SA949-Y(T6SHRP,FM Datasheet PDF and pin diagram description download.You can use the 2SA949-Y(T6SHRP,FM Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SA949-Y(T6SHRP,FM pin diagram and circuit diagram and usage method of function,2SA949-Y(T6SHRP,FM electronics tutorials.You can download from the Anli.