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2SC2235-Y(T6CANOFM Технические параметры

Toshiba Semiconductor and Storage  2SC2235-Y(T6CANOFM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Current-Collector (Ic) (Max) 800mA
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 120V
Frequency - Transition 120MHz
Просмотр сходства

2SC2235-Y(T6CANOFM Документы

2SC2235-Y(T6CANOFM brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, 2SC2235-Y(T6CANOFM reference price.Toshiba Semiconductor and Storage. 2SC2235-Y(T6CANOFM parameters, 2SC2235-Y(T6CANOFM Datasheet PDF and pin diagram description download.You can use the 2SC2235-Y(T6CANOFM Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SC2235-Y(T6CANOFM pin diagram and circuit diagram and usage method of function,2SC2235-Y(T6CANOFM electronics tutorials.You can download from the Anli.