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2SC2655-Y(TE6,F,M) Технические параметры

Toshiba Semiconductor and Storage  2SC2655-Y(TE6,F,M) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Number of Pins 3Pins
Supplier Device Package TO-92MOD
Collector-Emitter Saturation Voltage 500mV
Current-Collector (Ic) (Max) 2A
hFEMin 70
Operating Temperature 150°C TJ
Packaging Bulk
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Max Power Dissipation 900mW
Polarity NPN
Element Configuration Single
Power - Max 900mW
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

2SC2655-Y(TE6,F,M) Документы

2SC2655-Y(TE6,F,M) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, 2SC2655-Y(TE6,F,M) reference price.Toshiba Semiconductor and Storage. 2SC2655-Y(TE6,F,M) parameters, 2SC2655-Y(TE6,F,M) Datasheet PDF and pin diagram description download.You can use the 2SC2655-Y(TE6,F,M) Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SC2655-Y(TE6,F,M) pin diagram and circuit diagram and usage method of function,2SC2655-Y(TE6,F,M) electronics tutorials.You can download from the Anli.