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2SC2714-Y(TE85L,F) Технические параметры

Toshiba Semiconductor and Storage  2SC2714-Y(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 30V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-G3
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 550MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 6V
Gain 23dB
Transition Frequency 550MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 4V
Continuous Collector Current 20mA
Highest Frequency Band VERY HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 2.5dB @ 100MHz
RoHS Status RoHS Compliant
Просмотр сходства
2SC2714-Y(TE85L,F) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, 2SC2714-Y(TE85L,F) reference price.Toshiba Semiconductor and Storage. 2SC2714-Y(TE85L,F) parameters, 2SC2714-Y(TE85L,F) Datasheet PDF and pin diagram description download.You can use the 2SC2714-Y(TE85L,F) Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 2SC2714-Y(TE85L,F) pin diagram and circuit diagram and usage method of function,2SC2714-Y(TE85L,F) electronics tutorials.You can download from the Anli.