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2SC2859-O(TE85L,F) Технические параметры

Toshiba Semiconductor and Storage  2SC2859-O(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Collector-Emitter Breakdown Voltage 30V
Current-Collector (Ic) (Max) 500mA
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 150mW
Power - Max 150mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Max Breakdown Voltage 30V
Frequency - Transition 300MHz
RoHS Status RoHS Compliant
Просмотр сходства
2SC2859-O(TE85L,F) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, 2SC2859-O(TE85L,F) reference price.Toshiba Semiconductor and Storage. 2SC2859-O(TE85L,F) parameters, 2SC2859-O(TE85L,F) Datasheet PDF and pin diagram description download.You can use the 2SC2859-O(TE85L,F) Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SC2859-O(TE85L,F) pin diagram and circuit diagram and usage method of function,2SC2859-O(TE85L,F) electronics tutorials.You can download from the Anli.