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2SC2881-Y(TE12L,ZC Технические параметры
Toshiba Semiconductor and Storage 2SC2881-Y(TE12L,ZC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Package / Case | TO-243AA | |
| Mounting Type | Surface Mount | |
| Surface Mount | YES | |
| Supplier Device Package | PW-MINI | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 800 mA | |
| Product Status | Active | |
| Mfr | Toshiba Semiconductor and Storage | |
| Transistor Polarity | NPN | |
| RoHS | Non-Compliant | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 1 W | |
| Maximum Operating Temperature | + 150 C | |
| DC Collector/Base Gain hfe Min | 80 | |
| Collector-Emitter Saturation Voltage | 1 V | |
| Unit Weight | 0.001764 oz | |
| Minimum Operating Temperature | - | |
| Factory Pack QuantityFactory Pack Quantity | 1000 | |
| Mounting Styles | SMD/SMT | |
| Gain Bandwidth Product fT | 120 MHz | |
| Manufacturer | Toshiba | |
| Brand | Toshiba | |
| Maximum DC Collector Current | 800 mA | |
| DC Current Gain hFE Max | 240 | |
| Collector- Emitter Voltage VCEO Max | 120 V | |
| Package Description | SMALL OUTLINE, R-PSSO-F3 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 120 MHz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer Part Number | 2SC2881-Y(TE12L,ZC | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Risk Rank | 5.36 | |
| Operating Temperature | 150°C (TJ) | |
| Series | - | |
| Packaging | MouseReel | |
| Subcategory | Transistors | |
| Terminal Position | SINGLE | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSSO-F3 | |
| Configuration | Single | |
| Power Dissipation | 1 | |
| Case Connection | COLLECTOR | |
| Power - Max | 500 mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 120 V | |
| Transition Frequency | 120 | |
| Frequency - Transition | 120MHz | |
| Collector Base Voltage (VCBO) | 120 V | |
| Collector Current-Max (IC) | 0.8 A | |
| DC Current Gain-Min (hFE) | 120 | |
| Continuous Collector Current | 800 | |
| Collector-Emitter Voltage-Max | 120 V | |
| Product Category | Bipolar Transistors - BJT |
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