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2SC4793,F(J Технические параметры

Toshiba Semiconductor and Storage  2SC4793,F(J technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS
Current-Collector (Ic) (Max) 1A
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 230V
Frequency - Transition 100MHz

2SC4793,F(J Документы

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