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2SC5065-O(TE85L,F) Технические параметры

Toshiba Semiconductor and Storage  2SC5065-O(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Collector-Emitter Breakdown Voltage 12V
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Reach Compliance Code unknown
Power - Max 100mW
Transistor Type NPN
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1dB @ 500MHz
RoHS Status RoHS Compliant
2SC5065-O(TE85L,F) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, 2SC5065-O(TE85L,F) reference price.Toshiba Semiconductor and Storage. 2SC5065-O(TE85L,F) parameters, 2SC5065-O(TE85L,F) Datasheet PDF and pin diagram description download.You can use the 2SC5065-O(TE85L,F) Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 2SC5065-O(TE85L,F) pin diagram and circuit diagram and usage method of function,2SC5065-O(TE85L,F) electronics tutorials.You can download from the Anli.