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2SC5095-O(TE85L,F) Технические параметры

Toshiba Semiconductor and Storage  2SC5095-O(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 16 Weeks
Contact Plating Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 10V
Number of Elements 1 Element
hFEMin 50
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 100mW
Свойство продукта Значение свойства
Frequency 10GHz
Element Configuration Single
Power Dissipation 100mW
Gain Bandwidth Product 10 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 15mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 7mA 6V
Gain 13dB ~ 7dB
Transition Frequency 7000MHz
Max Breakdown Voltage 10V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
Noise Figure (dB Typ @ f) 1.8dB @ 2GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

2SC5095-O(TE85L,F) Документы

2SC5095-O(TE85L,F) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, 2SC5095-O(TE85L,F) reference price.Toshiba Semiconductor and Storage. 2SC5095-O(TE85L,F) parameters, 2SC5095-O(TE85L,F) Datasheet PDF and pin diagram description download.You can use the 2SC5095-O(TE85L,F) Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 2SC5095-O(TE85L,F) pin diagram and circuit diagram and usage method of function,2SC5095-O(TE85L,F) electronics tutorials.You can download from the Anli.