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2SC5095-R(TE85L,F) Технические параметры

Toshiba Semiconductor and Storage  2SC5095-R(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 16 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 10V
Number of Elements 1 Element
hFEMin 50
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Element Configuration Single
Power - Max 100mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 10 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 15mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7mA 6V
Gain 13dB ~ 7.5dB
Transition Frequency 10000MHz
Max Breakdown Voltage 10V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.85pF
Noise Figure (dB Typ @ f) 1.8dB @ 2GHz
RoHS Status RoHS Compliant

2SC5095-R(TE85L,F) Документы

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