Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок - Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - JFETs
- /
- 2SK208-O(TE85L,F)
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
2SK208-O(TE85L,F) Технические параметры
Toshiba Semiconductor and Storage 2SK208-O(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Factory Lead Time | 52 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | 125°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2009 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| HTS Code | 8541.21.00.95 | |
| Max Power Dissipation | 100mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Element Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Input Capacitance (Ciss) (Max) @ Vds | 8.2pF @ 10V | |
| Continuous Drain Current (ID) | 1.4mA | |
| Gate to Source Voltage (Vgs) | -5V | |
| FET Technology | JUNCTION | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 600μA @ 10V | |
| Voltage - Cutoff (VGS off) @ Id | 400mV @ 100nA | |
| Voltage - Breakdown (V(BR)GSS) | 50V | |
| Current Drain (Id) - Max | 6.5mA | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
2SK208-O(TE85L,F) Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ