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3SK291(TE85L,F) Технические параметры

Toshiba Semiconductor and Storage  3SK291(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Factory Lead Time 52 Weeks
Package / Case SC-61AA
Surface Mount YES
Number of Pins 4Pins
Operating Temperature (Max.) 125°C
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Current Rating 30mA
Свойство продукта Значение свойства
Frequency 800MHz
Configuration Single
Current - Test 10mA
Drain to Source Voltage (Vdss) 12.5V
Transistor Type N-Channel Dual Gate
Continuous Drain Current (ID) 30mA
Gain 22.5dB
Drain Current-Max (Abs) (ID) 0.03A
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure 2.5dB
Voltage - Test 6V
RoHS Status RoHS Compliant
Просмотр сходства
3SK291(TE85L,F) brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, 3SK291(TE85L,F) reference price.Toshiba Semiconductor and Storage. 3SK291(TE85L,F) parameters, 3SK291(TE85L,F) Datasheet PDF and pin diagram description download.You can use the 3SK291(TE85L,F) Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find 3SK291(TE85L,F) pin diagram and circuit diagram and usage method of function,3SK291(TE85L,F) electronics tutorials.You can download from the Anli.