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CRS09(TE85L,Q,M) Технические параметры
Toshiba Semiconductor and Storage CRS09(TE85L,Q,M) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOD-123F | |
| Number of Pins | 2Pins | |
| Packaging | Cut Tape (CT) | |
| Published | 2008 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -40°C | |
| Base Part Number | CRS09 | |
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 50μA @ 30V | |
| Voltage - Forward (Vf) (Max) @ If | 460mV @ 1.5A | |
| Max Reverse Leakage Current | 50μA | |
| Operating Temperature - Junction | -40°C~150°C | |
| Max Surge Current | 30A | |
| Forward Voltage | 460mV | |
| Max Reverse Voltage (DC) | 30V | |
| Average Rectified Current | 1.5A | |
| Peak Reverse Current | 50μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 30V | |
| Capacitance @ Vr, F | 90pF @ 10V 1MHz | |
| Peak Non-Repetitive Surge Current | 30A | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
CRS09(TE85L,Q,M) Документы
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