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Toshiba Semiconductor and Storage CUS10S30,H3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Diodes - Rectifiers - Single | |
Марка | ||
Factory Lead Time | 12 Weeks | |
Contact Plating | Silver, Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | SC-76, SOD-323 | |
Number of Pins | 2Pins | |
Diode Element Material | SILICON | |
Number of Elements | 1 Element | |
Packaging | Tape & Reel (TR) | |
Published | 2014 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 2Terminations | |
Max Operating Temperature | 125°C | |
Min Operating Temperature | -55°C | |
Capacitance | 135pF | |
Terminal Position | DUAL | |
Terminal Form | GULL WING |
Свойство продукта | Значение свойства | |
---|---|---|
Reach Compliance Code | unknown | |
Element Configuration | Single | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Diode Type | Schottky | |
Current - Reverse Leakage @ Vr | 500μA @ 30V | |
Voltage - Forward (Vf) (Max) @ If | 230mV @ 100mA | |
Forward Current | 1A | |
Operating Temperature - Junction | 125°C Max | |
Output Current-Max | 1A | |
Max Reverse Voltage (DC) | 30V | |
Average Rectified Current | 1A | |
Peak Reverse Current | 500μA | |
Max Repetitive Reverse Voltage (Vrrm) | 30V | |
Capacitance @ Vr, F | 135pF @ 0V 1MHz | |
Peak Non-Repetitive Surge Current | 5A | |
Reverse Voltage | 20V | |
Max Forward Surge Current (Ifsm) | 5A | |
Max Junction Temperature (Tj) | 125°C | |
Height | 1.15mm | |
RoHS Status | RoHS Compliant |