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CUS10S30,H3F Технические параметры

Toshiba Semiconductor and Storage  CUS10S30,H3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Capacitance 135pF
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Reach Compliance Code unknown
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 500μA @ 30V
Voltage - Forward (Vf) (Max) @ If 230mV @ 100mA
Forward Current 1A
Operating Temperature - Junction 125°C Max
Output Current-Max 1A
Max Reverse Voltage (DC) 30V
Average Rectified Current 1A
Peak Reverse Current 500μA
Max Repetitive Reverse Voltage (Vrrm) 30V
Capacitance @ Vr, F 135pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 5A
Reverse Voltage 20V
Max Forward Surge Current (Ifsm) 5A
Max Junction Temperature (Tj) 125°C
Height 1.15mm
RoHS Status RoHS Compliant

CUS10S30,H3F Документы

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