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Toshiba Semiconductor and Storage CUS10S30,H3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Silver, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-76, SOD-323 | |
| Number of Pins | 2Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| Capacitance | 135pF | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 500μA @ 30V | |
| Voltage - Forward (Vf) (Max) @ If | 230mV @ 100mA | |
| Forward Current | 1A | |
| Operating Temperature - Junction | 125°C Max | |
| Output Current-Max | 1A | |
| Max Reverse Voltage (DC) | 30V | |
| Average Rectified Current | 1A | |
| Peak Reverse Current | 500μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 30V | |
| Capacitance @ Vr, F | 135pF @ 0V 1MHz | |
| Peak Non-Repetitive Surge Current | 5A | |
| Reverse Voltage | 20V | |
| Max Forward Surge Current (Ifsm) | 5A | |
| Max Junction Temperature (Tj) | 125°C | |
| Height | 1.15mm | |
| RoHS Status | RoHS Compliant |