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DF2B29FU,H3XHF Технические параметры

Toshiba Semiconductor and Storage  DF2B29FU,H3XHF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Supplier Device Package USC
Mfr Toshiba Semiconductor and Storage
Product Status Active
Cd - Diode Capacitance 9 pF
Qualification AEC-Q101
Breakdown Voltage / V 32 V
Maximum Operating Temperature + 150 C
Vesd - Voltage ESD Contact 25 kV
Factory Pack QuantityFactory Pack Quantity 3000
Ipp - Peak Pulse Current 3 A
Pppm - Peak Pulse Power Dissipation 140 W
Part # Aliases DF2B29FU,H3XHF(B DF2B29FU,H3XHF
Manufacturer Toshiba
Brand Toshiba
RoHS Details
Vesd - Voltage ESD Air Gap 25 kV
Свойство продукта Значение свойства
Series Automotive, AEC-Q101
Operating Temperature 150°C (TJ)
Packaging MouseReel
Type Zener
Applications Automotive
Subcategory TVS Diodes / ESD Suppression Diodes
Termination Style SMD/SMT
Number of Channels 1 ChannelChannel
Power Line Protection No
Voltage - Breakdown (Min) 26V
Power - Peak Pulse 140W
Current - Peak Pulse (10/1000μs) 3A (8/20μs)
Voltage - Clamping (Max) @ Ipp 47V
Clamping Voltage 37 V
Voltage - Reverse Standoff (Typ) 24V (Max)
Product Type ESD Suppressors
Bidirectional Channels 1
Capacitance @ Frequency 9pF @ 1MHz
Product Category ESD Suppressors / TVS Diodes
Просмотр сходства
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