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DF2B5BSL,L3F Технические параметры

Toshiba Semiconductor and Storage  DF2B5BSL,L3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка
Mounting Type Surface Mount
Package / Case 2-SMD, No Lead
Supplier Device Package SL2
Mfr Toshiba Semiconductor and Storage
Product Status Active
Cd - Diode Capacitance 11 pF
Breakdown Voltage / V 3.7 V
Maximum Operating Temperature + 150 C
Vesd - Voltage ESD Contact 23 kV
Factory Pack QuantityFactory Pack Quantity 10000
Ipp - Peak Pulse Current 8 A
Pppm - Peak Pulse Power Dissipation 112 W
Manufacturer Toshiba
Brand Toshiba
RoHS Details
Vesd - Voltage ESD Air Gap 23 kV
Series -
Operating Temperature 150°C (TJ)
Свойство продукта Значение свойства
Packaging MouseReel
Type Zener
Applications General Purpose
Subcategory TVS Diodes / ESD Suppression Diodes
Termination Style SMD/SMT
Working Voltage 3.3 V
Polarity Bidirectional
Number of Channels 1 ChannelChannel
Power Line Protection No
Voltage - Breakdown (Min) 3.7V
Power - Peak Pulse 112W
Current - Peak Pulse (10/1000μs) 8A
Voltage - Clamping (Max) @ Ipp 14V
Clamping Voltage 14 V
Voltage - Reverse Standoff (Typ) 3.3V (Max)
Product Type ESD Suppressors
Bidirectional Channels 1
Capacitance @ Frequency 11pF @ 1MHz
Product Category ESD Suppressors / TVS Diodes
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