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DF2B6.8ACT,L3F Технические параметры

Toshiba Semiconductor and Storage  DF2B6.8ACT,L3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка
Factory Lead Time 12 Weeks
Package / Case SOD-882
Mounting Type Surface Mount
Mount Surface Mount
Diode Element Material SILICON
Reverse Stand-off Voltage 5V
Number of Elements 1 Element
Breakdown Voltage / V 5.8V
Packaging Tape & Reel (TR)
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Type Zener
Max Operating Temperature 150°C
Applications General Purpose
Свойство продукта Значение свойства
Capacitance 9pF
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N2
Configuration SINGLE
Number of Channels 1Channel
Power Line Protection No
Current - Peak Pulse (10/1000μs) 1A 8/20μs
Voltage - Clamping (Max) @ Ipp 7V Typ
Clamping Voltage 7V
Voltage - Reverse Standoff (Typ) 5V Max
Peak Pulse Current 1A
Direction Bidirectional
Rep Pk Reverse Voltage-Max 5V
Capacitance @ Frequency 9pF @ 1MHz
Max Junction Temperature (Tj) 150°C
Height 400μm
RoHS Status RoHS Compliant

DF2B6.8ACT,L3F Документы

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