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DF2B6.8M1ACT,L3F Технические параметры

Toshiba Semiconductor and Storage  DF2B6.8M1ACT,L3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-882
Supplier Device Package CST2
Reverse Stand-off Voltage 5V
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Type Zener
Applications General Purpose
Свойство продукта Значение свойства
Power Line Protection No
Voltage - Breakdown (Min) 6V
Power - Peak Pulse 50W
Current - Peak Pulse (10/1000μs) 2.5A 8/20μs
Voltage - Clamping (Max) @ Ipp 20V
Clamping Voltage 20V
Voltage - Reverse Standoff (Typ) 5V Max
Peak Pulse Current 2.5A
Peak Pulse Power 50W
Bidirectional Channels 1
Capacitance @ Frequency 0.3pF @ 1MHz
Number of Bidirectional Channels 1Bidirectional Channel
RoHS Status RoHS Compliant
Просмотр сходства

DF2B6.8M1ACT,L3F Документы

DF2B6.8M1ACT,L3F brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, DF2B6.8M1ACT,L3F reference price.Toshiba Semiconductor and Storage. DF2B6.8M1ACT,L3F parameters, DF2B6.8M1ACT,L3F Datasheet PDF and pin diagram description download.You can use the DF2B6.8M1ACT,L3F TVS - Diodes, DSP Datesheet PDF, find DF2B6.8M1ACT,L3F pin diagram and circuit diagram and usage method of function,DF2B6.8M1ACT,L3F electronics tutorials.You can download from the Anli.