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DF3A6.8CT,L3F Технические параметры

Toshiba Semiconductor and Storage  DF3A6.8CT,L3F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package CST3
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Active
Base Product Number DF3A6
Factory Pack QuantityFactory Pack Quantity 10000
Manufacturer Toshiba
Brand Toshiba
RoHS Details
Cd - Diode Capacitance 45 pF
Breakdown Voltage / V 6.4 V
Maximum Operating Temperature + 150 C
Vesd - Voltage ESD Contact 30 kV
Minimum Operating Temperature - 55 C
Series -
Свойство продукта Значение свойства
Operating Temperature 150°C (TJ)
Packaging Reel
Type Zener
Applications General Purpose
Subcategory TVS Diodes / ESD Suppression Diodes
Termination Style SMD/SMT
Working Voltage 5 V
Polarity Unidirectional
Number of Channels 2 ChannelChannel
Power Line Protection No
Voltage - Breakdown (Min) 6.4V
Power - Peak Pulse -
Current - Peak Pulse (10/1000μs) -
Voltage - Clamping (Max) @ Ipp -
Voltage - Reverse Standoff (Typ) 5V (Max)
Unidirectional Channels 2
Product Type ESD Suppressors
Capacitance @ Frequency 45pF @ 1MHz
Product Category ESD Suppressors / TVS Diodes
Просмотр сходства
DF3A6.8CT,L3F brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, DF3A6.8CT,L3F reference price.Toshiba Semiconductor and Storage. DF3A6.8CT,L3F parameters, DF3A6.8CT,L3F Datasheet PDF and pin diagram description download.You can use the DF3A6.8CT,L3F TVS - Diodes, DSP Datesheet PDF, find DF3A6.8CT,L3F pin diagram and circuit diagram and usage method of function,DF3A6.8CT,L3F electronics tutorials.You can download from the Anli.