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DF3D18FU,LXHF Технические параметры

Toshiba Semiconductor and Storage  DF3D18FU,LXHF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package USM
Mfr Toshiba Semiconductor and Storage
Product Status Active
Cd - Diode Capacitance 9 pF
Qualification AEC-Q200
Breakdown Voltage / V 16.2 V
Maximum Operating Temperature + 150 C
Vesd - Voltage ESD Contact 30 kV
Factory Pack QuantityFactory Pack Quantity 3000
Ipp - Peak Pulse Current 2.5 A
Pppm - Peak Pulse Power Dissipation 80 W
Part # Aliases DF3D18FU,LXHF(B
Manufacturer Toshiba
Brand Toshiba
RoHS Details
Vesd - Voltage ESD Air Gap 30 kV
Minimum Operating Temperature - 55 C
Свойство продукта Значение свойства
Series Automotive, AEC-Q101
Operating Temperature 150°C (TJ)
Packaging MouseReel
Type Zener
Applications Automotive
Subcategory TVS Diodes / ESD Suppression Diodes
Termination Style SMD/SMT
Working Voltage 12 V
Polarity Bidirectional
Number of Channels 1 ChannelChannel
Power Line Protection No
Voltage - Breakdown (Min) 16.2V
Power - Peak Pulse 80W
Current - Peak Pulse (10/1000μs) 2.5A (8/20μs)
Voltage - Clamping (Max) @ Ipp 33V
Clamping Voltage 33 V
Voltage - Reverse Standoff (Typ) 12V (Max)
Product Type ESD Suppressors
Bidirectional Channels 2
Capacitance @ Frequency 9pF @ 1MHz
Product Category ESD Suppressors / TVS Diodes
Просмотр сходства
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